HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 1/4
HSC945SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AF amplifier and low speed switching
applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipations
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 50 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
60
50
5
-
-
-
50
135
150
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
Max.
-
-
-
100
100
0.25
-
600
600
4
Unit
V
V
V
nA
nA
V
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V, IE=0
VEB=5V, IB=0
IC=100mA, IB=10mA
VCE=6V, IC=0.1mA
VCE=6V, IC=1mA
IC=1mA , VCE=10V, f=100MHz
IE=0, VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification of hFE2
Rank
Range
Q
135-270
P
200-400
K
300-600
HSC945SP
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
