HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6706-B
Issued Date : 1993.01.13
Revised Date : 1999.08.01
Page No. : 1/3
HSD1159
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Capable of efficient drive with small internal loss due to excellent tf.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 200 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current ........................................................................................................... 4.5 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
ft
Min.
200
60
6
-
-
-
-
30
25
-
Typ.
-
-
-
-
-
0.5
-
-
-
10
Max.
-
-
-
0.1
0.1
1
1.5
160
-
-
Unit
V
V
V
mA
mA
V
V
Test Conditions
IC=5mA, IE=0
IC=5mA, IB=0
IE=5mA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
IC=4A, IB=0.4A
IC=4A, IB=0.4A
IC=1A, VCE=5V
IC=4A, VCE=5V
VCE=5V, IC=1A
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
