HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6606
Issued Date : 1993.03.15
Revised Date : 2002.01.15
Page No. : 1/4
HSD1609
NPN EPITAXIAL PLANAR TRANSISTOR
Features
•
Low frequency high voltage amplifier
•
Complementary pair with HSB1109
Absolute Maximum Ratings
(Ta=25°C)
TO-126ML
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................. 1.25 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 160 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
160
160
5
-
-
-
60
30
145
-
Typ.
-
-
-
-
-
-
-
-
-
3.8
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=140V
IC=30mA, IB=3mA
IC=10mA, VCE=5V
IC=10mA, VCE=5V
IC=1mA, VCE=5V
IC=10mA , VCE=5V
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
D
160-320
HSD1609
HSMC Product Specification