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HSD1616A 参数 Datasheet PDF下载

HSD1616A图片预览
型号: HSD1616A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 43 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HSD1616A的Datasheet PDF文件第2页浏览型号HSD1616A的Datasheet PDF文件第3页浏览型号HSD1616A的Datasheet PDF文件第4页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 1/4
HSD1616A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD1616A is designed for audio frequency power amplifier and
medium speed switching applications.
Absolute Maximum Ratings
TO-92
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 120 V
VCEO Collector to Emitter Voltage ...................................................................................... 60 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current (DC) ...................................................................................................... 1 A
IC Collector Current *(Pulse) ................................................................................................. 2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
ton
ts
tf
Min.
120
60
6
-
-
-
-
600
135
81
100
-
-
-
-
Typ.
-
-
-
-
-
150
0.9
-
-
-
160
-
0.07
0.95
0.07
Max.
-
-
-
100
100
300
1.2
700
600
-
-
19
-
-
-
Unit
V
V
V
nA
nA
mV
V
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=6V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA
IE=0, VCB=10V, f=1MHz
VCE=10V, IC=100mA
IB1=-IB2=10mA
VBE(off)=-2~-3V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
uS
uS
uS
Classification of hFE1
Rank
Range
Y
135-270
G
200-400
L
300-600
HSD1616A
HSMC Product Specification