HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 1/4
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD313 is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-220
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 60 V
BVCEO Collector to Emitter Voltage.................................................................................... 60 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
ft
Min.
60
60
5
-
-
-
-
-
40
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
8
Max.
-
-
-
0.1
5
1
1
1.5
320
-
-
Unit
V
V
V
mA
mA
mA
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=20V, IE=0
VCE=60V, IB=0
VEB=4V, IC=0
IC=2A, IB=0.2A
IC=1A, VCE=2V
IC=1A, VCE=2V
IC=0.1A, VCE=2V
VCE=5V, IC=0.5A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
V
Classification Of hFE1
Rank
hFE
C
40-80
D
60-120
E
100-200
F
160-320
HSD313
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
