HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6518
Issued Date : 1993.02.24
Revised Date : 2002.02.20
Page No. : 1/4
HSD471A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD471A is designed for use in drive and output stage of
frequency amplifier applications.
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 800 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current............................................................................................................... 1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Min.
40
30
5
-
-
-
70
-
-
Typ.
-
-
-
-
-
-
-
130
16
Max.
-
-
-
100
0.5
1.2
400
-
-
Unit
V
V
V
nA
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=30V, IE=0
IC=1A, IB=100mA
IC=1A, IB=100mA
VCE=1V, IC=100mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
O
70-140
Y
120-240
GR
200-400
HSD471A
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
