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HSD879 参数 Datasheet PDF下载

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型号: HSD879
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延型晶体管 [SILICON NPN EPITAXIAL TYPE TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 34 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HSD879的Datasheet PDF文件第2页浏览型号HSD879的Datasheet PDF文件第3页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 1/3
HSD879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Features
Charger-up time is about 1 ms faster than of a germanium transistor
Small saturation voltage can bring less power dissipation and flashing times
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW
Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage .................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current............................................................................................................... 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Electrical Characteristics
(Ta=25°C)
Symbol
BVCEO
BVEBO
BVCBO
BVCEX
ICBO
IEBO
*hFE
*VCE(sat)
fT
Cob
Min.
10
6
30
20
-
-
140
-
-
-
Typ.
-
-
-
-
-
-
210
0.3
200
30
Max.
-
-
-
-
100
100
400
0.4
-
-
Unit
V
V
V
V
nA
nA
V
MHZ
pF
Test Condition
IC=1mA
IE=10uA
IC=10uA
IC=1mA, VBE=3V
VCB=20V
VBE=4V
VCE=2V, IC=3A
IC=3A, IB=60mA
VCE=10V, IC=50mA
VCB=10V, f=1MHZ
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HSD879
HSMC Product Specification