HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 2000.11.01
Page No. : 1/5
HSK2474I
N - Channel MOSFETs
Description
•
Dynamic dv/dt Rating
•
Repetitive Avalanche rated
•
Surface Mount
•
Straigh Lead
•
Available in Tape&Reel
•
Fast Switching
•
Ease of Paralleling
Features
•
Low Drain-Source ON Resistance - R
DS(ON)
=1.2Ω(Typ.)@ V
DS
=10V, I
D
=1.3A
•
High Forward Transfer Admittance -|Yfs|=1.2S@V
DS
=50V, I
D
=1.3A
•
Low Leakage Current - I
DSS
=100uA (Max.)@V
DS
=200V
•
Enhancement-Mode - V
th
= 2.0~4.0V@V
DS
=4V, I
D
=250uA
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
•
Maximum Voltages and Currents
Drain to Source Breakdown Voltage ................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source Voltage....................................................................................................
±
20 V
Drain Current (Cont.) ......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
R
θJC
R
θJA
Max.
5
50
Units
°C/W
°C/W
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
