HT112 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HT200101

Issued Date : 2000.05.01

Revised Date : 2005.12.02

Page No. : 1/5

HT112

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HT112 is designed for use in general purpose amplifier and low-speed

switching applications.

TO-126

Absolute Maximum Ratings

(T

A

=25°C)

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

A

=25°C) ................................................................................................................... 1.5 W

Total Power Dissipation (T

C

=25°C) .................................................................................................................... 30 W

•

Thermal Resistance

Junction To Case R

θjc

................................................................................................................................... 4.2

o

C/W

•

Maximum Voltages and Currents

BV

CBO

Collector to Base Voltage....................................................................................................................... 100 V

BV

CEO

Collector to Emitter Voltage .................................................................................................................... 100 V

BV

EBO

Emitter to Base Voltage.............................................................................................................................. 5 V

I

C

Collector Current ................................................................................................................................................ 4 A

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

I

CBO

I

CEO

I

EBO

*V

CE(sat)

*V

BE(on)

*h

FE1

*h

FE2

Cob

Min.

100

100

-

-

-

-

-

1

500

-

Typ.

-

-

-

-

-

-

-

-

-

-

Max.

-

-

1

2

2

2.5

2.8

-

-

100

pF

Unit

V

V

mA

mA

mA

V

V

K

I

C

=1mA

I

C

=30mA

V

CB

=100V

V

CE

=50V

V

EB

=5V

I

C

=2A, I

B

=8mA

I

C

=2A, V

CE

=4V

I

C

=1A, V

CE

=4V

I

C

=2A, V

CE

=4V

V

CB

=10V, I

E

=0

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

HT112

HSMC Product Specification