HT666 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6464

Issued Date : 1993.09.07

Revised Date : 2005.02.15

Page No. : 1/4

HT666

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HT666 is designed for general purpose amplifier and high-speed,medium-

power switching applications.

TO-92

Features

•

High Frequency Current Gain

•

High Speed Switching Transistor

Absolute Maximum Ratings

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

A

=25°C) ............................................................................................................... 625 mW

•

Maximum Voltages and Currents (T

A

=25°C)

BV

CBO

Collector to Base Voltage......................................................................................................................... 75 V

BV

CEO

Collector to Emitter Voltage...................................................................................................................... 40 V

BV

EBO

Emitter to Base Voltage.............................................................................................................................. 6 V

I

C

Collector Current ........................................................................................................................................ 600 mA

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

*BV

CEO

BV

EBO

I

CBO

I

CEX

I

EBO

*V

CE(sat)1

*V

CE(sat)2

*V

BE(sat)1

*V

BE(sat)2

*h

FE1

*h

FE2

*h

FE3

*h

FE4

*h

FE5

*h

FE6

f

T

Min.

75

40

6

-

-

-

-

-

-

-

35

50

75

100

40

50

300

-

-

-

Typ.

-

-

-

-

-

-

-

-

-

-

-

-

-

Max.

-

-

-

10

10

50

300

1

1.2

2

-

-

-

300

-

-

-

Unit

V

V

V

nA

nA

nA

mV

V

V

V

-

-

-

-

-

-

MHz

I

C

=10uA

I

C

=100mA

I

E

=10uA

V

CB

=60V

V

CB

=60V, V

EB(off)

=3V

V

EB

=3V

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

V

CE

=10V, I

C

=100uA

V

CE

=10V, I

C

=1mA

V

CE

=10V, I

C

=10mA

V

CE

=10V, I

C

=150mA

V

CE

=10V, I

C

=500mA

V

CE

=1V, I

C

=150mA

I

C

=20mA, V

CE

=20V, f=100MHz

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

HT666

HSMC Product Specification

Test Conditions