HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6743
Issued Date : 1998.07.01
Revised Date : 2001.08.30
Page No. : 1/3
HTIP105
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP105 is designed for monolithic construction with built in base-
emitter shunt resistors industrial.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................. +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................................... 80 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................... -60 V
BVCEO Collector to Emitter Voltage................................................................................................. -60 V
BVEBO Emitter to Base Voltage ......................................................................................................... -5 V
IC Collector Current ............................................................................................................................ -8 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-60
-60
-5
-
-
-
-
-
-
1000
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-8
-2
-2.5
-2.8
20000
-
300
Unit
V
V
V
uA
uA
mA
V
V
V
Test Conditions
IC=-1mA
IC=-30mA
IE=-0.1mA
VCE=-30V
VCB=-60V
VEB=-5V
IC=-3A, IB=-6mA
IC=-8A, IB=-80mA
IC=-8A, VCE=-4V
IC=-3A, VCE=-4V
IC=-8A, VCE=-4V
VCE=-10V, f=100KHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
pF
Darlington Schematic
C
B
R1
R2
E
HTIP105
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
