HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6735
Issued Date : 1994.08.10
Revised Date : 2002.01.18
Page No. : 1/4
HTIP107
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP107 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-220
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................ +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 80 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltage ............................................................................................ -100 V
BVEBO Emitter to Base Voltage ...................................................................................................... -5 V
IC Collector Current ......................................................................................................................... -8 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-100
-100
-
-
-
-
-
-
1
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-50
-50
-8
-2
-2.5
-2.8
20
-
300
Unit
V
V
uA
uA
mA
V
V
V
K
pF
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
VCB=-100V, IE=0
VCE=-50V, IB=0
VEB=-5V, IC=0
IC=-3A, IB=-6mA
IC=-8A, IB=-80mA
IC=-8A, VCE=-4V
IC=-3A, VCE=-4V
IC=-8A, VCE=-4V
VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Darlington Schematic
C
B
R1
R2
E
HTIP107
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
