HTIP122 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6712

Issued Date : 1993.01.13

Revised Date : 2002.05.07

Page No. : 1/4

HTIP122

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP122 is designed for use in general purpose amplifier and low-

speed switching applications.

Absolute Maximum Ratings

(Ta=25°C)

TO-220

•

Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................................ +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)................................................................................................. 65 W

Total Power Dissipation (Ta=25°C)................................................................................................... 2 W

•

Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................................. 100 V

BVCEO Collector to Emitter Voltage .............................................................................................. 100 V

BVEBO Emitter to Base Voltage ....................................................................................................... 5 V

IC Collector Current (Continuous)...................................................................................................... 5 A

IC Collector Current (Peak)................................................................................................................ 8 A

Characteristics

(Ta=25°C)

Symbol

BVCBO

*BVCEO

ICBO

ICEO

IEBO

*VCE(sat)1

*VCE(sat)2

*VBE(on)

*hFE1

*hFE2

Cob

Min.

100

100

-

-

-

-

-

-

1

1

-

Typ.

-

-

-

-

-

-

-

-

-

-

-

Max.

-

-

200

500

2

2

4

2.5

-

-

200

Unit

V

V

uA

uA

mA

V

V

V

K

K

pF

Test Conditions

IC=1mA, IE=0

IC=100mA

VCB=100V

VCE=50V

VEB=5V

IC=3A, IB=12mA

IC=5A, IB=20mA

IC=3A, VCE=3V

IC=0.5A, VCE=3V

IC=3A, VCE=3V

VCB=10V, f=1MHz

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Darlington Schematic

C

B

R1

R2

E

HTIP122

HSMC Product Specification