HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6707
Issued Date : 1993.01.13
Revised Date : 2002.03.04
Page No. : 1/3
HTIP41C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP41C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-220
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
IC Collector Current............................................................................................................... 6 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
100
100
-
-
-
-
-
30
15
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
400
700
1
1.5
2
-
75
-
Unit
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
VCE=100V, IB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=6A, IB=600mA
IC=6A, VCE=4V
IC=0.3A, VCE=4V
IC=3A, VCE=4V
VCE=10V, IC=500mA, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHZ
Classification Of hFE2
Rank
hFE2
A
15-50
B
40-75
HTIP41C
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
