HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6454-B
Issued Date : 1993.02.24
Revised Date : 2000.10.01
Page No. : 1/3
HTL145
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTL145 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 500 V
VCEO Collector to Emitter Voltage ................................................................................... 500 V
IC Collector Current ....................................................................................................... 300 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICER
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
500
500
-
-
-
-
-
-
50
50
40
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
10
1
200
500
3
900
-
300
-
-
30
Unit
V
V
uA
uA
nA
mV
V
mV
Test Conditions
IC=100uA
IC=1mA
VCB=500V
VCE=200V
VEB=6V
IC=20mA, IB=2mA
IC=100mA, IB=4mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=20mA
VCE=10V, IC=80mA
VCE=20V, IE=10mA
VCB=20V, f=1MHZ
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
