HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6452
Issued Date : 1993.02.10
Revised Date : 2002.04.18
Page No. : 1/3
HTL195
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL195 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -500 V
VCEO Collector to Emitter Voltage ................................................................................... -500 V
IC Collector Current ...................................................................................................... -300 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-500
-500
-
-
-
-
-
-
50
50
40
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-10
-1
-200
-500
-3
-900
-
300
-
-
30
Unit
V
V
uA
uA
nA
mV
V
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
VCB=-500V, IE=0
VCE=-100V, IB=0
VEB=-6V, IC=0
IC=-20mA, IB=-2mA
IC=-80mA, IB=-4mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HTL195
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
