HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2001.03.01
Revised Date : 2001.03.29
Page No. : 1/3
HTL295D
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL295D is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.5 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -500 V
VCEO Collector to Emitter Voltage .................................................................................. -500 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ..................................................................................................... -250 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-500
-500
-6
-
-
-
-
-
-
50
60
50
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-10
-0.2
-500
-2
-3
-750
-
250
-
-
30
Unit
V
V
V
uA
uA
uA
mV
V
V
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA
VCB=-500V, IE=0
VCE=-500V, IB=0
VEB=-6V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-80mA, IB=-4mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HTL295D
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
