1SS344
SOT-23
SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
High Forward Current
APPLICATIONS
High Speed Switching
MARKING: H9
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
V
R
I
O
I
FM
I
FSM
P
D
R
θJA
T
j
T
stg
Parameter
DC Blocking Voltage
Forward Continuous Current
Peak Forward Current
Surge Current@10ms
Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
20
500
1.5
5
200
500
125
-55~+150
Unit
V
mA
A
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Symbol
V
(BR)
I
R
I
R
=100μA
V
R
=10V
V
R
=20V
I
F
=10mA
Forward voltage
V
F
I
F
=100mA
I
F
=500mA
Total capacitance
Reverse recovery time
C
tot
t
rr
V
R
=0V, f=1MHz
I
F
= I
R
=50mA, V
R
=6V
120
20
Test conditions
Min
20
20
100
0.35
0.43
0.55
pF
ns
V
Typ
Max
Unit
V
μA
1
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05