2SA1 298
TRANSISTOR(PNP)
SOT–23
FEATURES
Low Frequency Power Amplifier Application
Power Swithing Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-800
200
625
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
C
ob
Test
conditions
Min
-35
-30
-5
-0.1
-0.1
100
40
-0.5
-0.8
-0.5
120
13
V
V
MHz
pF
320
Typ
Max
Unit
V
V
V
μA
μA
I
C
=-1mA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
I
C
=-500mA, I
B
=-20mA
V
CB
=-1V,I
C
=-10mA,
V
CE
=-5V,I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
CLASSIFICATION OF h
FE(1)
RANK
RANGE
MARKING
O
100–200
Y
160–320
IO
IY
１
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semiconductor
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