2SA1 57 9
TRANSISTOR(PNP)
SOT-323
1. BASE
FEATURES
High breakdown voltage. (BV
CEO
= -120V)
Complements the 2SC4102
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-50
100
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
-120
-120
-5
-0.5
-0.5
180
560
-0.5
140
3.2
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-50μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-50μA,I
C
=0
V
CB
=-100V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-6V,I
C
=-2mA
I
C
=-10mA,I
B
=-1mA
V
CE
=-12V,I
C
=-2mA,f=30MHz
V
CB
=-12V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
１
JinYu
h
FE
R
180-390
RR
S
270-560
RS
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
