2SA1 61 1
TRANSISTOR(PNP)
FEATURES
High DC Current Gain
High Voltage
Complementary to 2SC4177
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-100
150
833
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–323
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
C
ob
Test
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-1mA
V
CE
=-6V,I
c
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
-0.58
180
4.5
90
conditions
Min
-60
-50
-5
-100
-100
600
-0.3
-0.68
V
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
M4
90–180
M4
M5
135–270
M5
M6
200–400
M6
M7
300–600
M7
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
