2SB1 1 1 9
TRANSISTOR(PNP)
SOT-89-3L
1. BASE
FEATURES
Small Flat Package
LF Amplifier, Electronic Governor Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-25
-25
-5
-1
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
C
ob
f
T
Test
conditions
Min
-25
-25
-5
-100
-100
100
40
-0.7
-1.2
25
180
V
V
pF
MHz
560
Typ
Max
Unit
V
V
V
nA
nA
I
C
=-10µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-2V, I
C
=-50mA
V
CE
=-2V, I
C
=-1A
I
C
=-500mA,I
B
=-50mA
I
C
=-500mA,I
B
=-50mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-10V,I
C
=-50mA,
CLASSIFICATION OF h
FE(1)
RANK
RANGE
MARKING
R
100–200
S
140–280
BB
T
200–400
U
280–560
１
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semiconductor
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