2SB1 21 8 A
TRANSISTOR(PNP)
FEATURES
High DC Current Gain
Complementary to 2SD1819A
APPLICATIONS
General Purpose Amplification
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-45
-45
-7
-100
150
833
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–323
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=-10µA, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-10V, I
B
=0
V
EB
=-5V, I
C
=0
V
CE
=-10V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V,I
E
=1mA ,f=200MHz
V
CB
=-10V, I
E
=0, f=1MHz
80
2.7
160
conditions
Min
-45
-45
-7
-100
-100
-100
460
-0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
µA
nA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
Q
160–260
BQ1
R
210–340
BR1
S
290–460
BS1
１
JinYu
semiconductor
www.htsemi.com
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