2SB7 66A
TRANSISTOR(PNP)
SOT-89
1. BASE
FEATURES
Large collector power dissipation P
C
Complementary to 2SD874A
2. COLLECTOR
1
2
3
3. EMITTER
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
conditions
MIN
-60
-50
-5
-0.1
-0.1
85
50
-0.2
-0.85
200
20
30
-0.4
-1.2
V
V
MHz
pF
340
TYP
MAX
UNIT
V
V
V
μA
μA
Ic=-10μA,I
E
=0
Ic=-2mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-10V,I
C
=-500mA
V
CE
=-5V,I
C
=-1A
I
C
=-500mA,I
B
=-50mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-10V,I
C
=-50mA,f=200MHz
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
Q
85-170
R
120-240
S
170-340
MAKING
BQ
BR
BS
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
