2SC2411
TRANSISOR(NPN)
FEATURES
High I
CMax
.I
CMax
. = 0.5mA
Low V
CE(sat)
.Optimal for low voltage operation.
Complements the 2SA1036
SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
32
5
500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
I
C
=
100
μA,I
E
=0
I
C
=
1
mA,I
B
=0
I
E
=
100
μA,I
C
=0
V
CB
=
20
V,I
E
=0
V
EB
=
4
V,I
C
=0
V
CE
=
3
V,I
C
=
100
mA
I
C
=
500
mA,I
B
=
50
mA
V
CE
=
5
V,I
C
=
20
mA,f=100MHz
V
CB
=
10
V,I
E
=0,f=
1
MHz
40
32
5
1
1
82
390
0.4
250
6.0
μA
μA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
Marking
h
FE
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
