2SC2712
TRANSISTOR (NPN)
FEATURE
·
Low Noise: NF=1 dB (Typ),10dB(MAX)
·
Complementary to 2SA1162
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test
conditions
MIN
60
50
5
0.1
0.1
70
0.1
80
2.0
1.0
3.5
10
700
0.25
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
= 100μA, I
E
=0
I
C
=1mA ,
I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 60 V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
= 100mA, I
B
=10mA
V
CE
=10V, I
C
= 1mA
V
CB
=10V, I
E
=0,f=1 MHz
V
CE
=6V,I
C
=0.1mA,f=1kHz,
Rg=10kΩ
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
