2SC2881
TRANSISTOR (NPN)
FEATURES
Small Flat Package
High Transition Frequency
High Voltage
Complementary to 2SA1201
APPLICATIONS
Power Amplifier and Voltage Amplifier
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
800
500
250
150
-55~+150
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test
conditions
Min
120
120
5
0.1
0.1
80
240
1
1
120
30
V
V
MHz
pF
Typ
Max
Unit
V
V
V
µA
µA
I
C
=1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=120V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA,I
B
=50mA
V
CE
=5V, I
C
=0.5A
V
CE
=5V,I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF h
FE
RANK
RANGE
MARKING
O
80–160
CO1
Y
120–240
CY1
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
