2SC3052
TRANSISTOR (NPN)
FEATURES
Low collector to emitter saturation voltage
V
CE(sat)
=0.3V max(@I
C
=100mA,I
B
=10mA)
Excellent linearity of DC forward current gain
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
6
0.2
150
125
-55-125
Units
V
V
V
A
mW
℃
℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR) CBO
V
(BR) CEO
V
(BR) EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE (sat)
V
BE (sat)
unless
Test
otherwise specified)
conditions
I
E
=0
MIN
50
50
6
0.1
0.1
150
50
0.3
1
180
V
V
MHz
800
MAX
UNIT
V
V
V
I
C
= 100
μ
A,
I
C
= 100
μ
A, I
B
=0
I
E
= 100
μ
A, I
C
=0
V
CB
= 50 V , I
E
=0
V
EB
= 6V , I
C
=0
V
CE
= 6V, I
C
= 1mA
V
CE
= 6V, I
C
= 0.1mA
I
C
=100mA, I
B
= 10mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 6V, I
C
= 10mA
V
CE
=6V, I
E
=0, f=1MHz
V
CE
=6V,I
E
=-0.1mA, f=1KHz, R
G
=2KΩ
μ
A
μ
A
f
T
C
ob
NF
4
15
pF
dB
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
E
150~300
LE
F
250~500
LF
G
400~800
LG
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
