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2SC3356 参数 Datasheet PDF下载

2SC3356图片预览
型号: 2SC3356
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管( NPN ) [TRANSISTOR (NPN)]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 97 K
品牌: HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
   
2SC3356
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
:
0.2
W (Tamb=25℃)
SOT-23-3L
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 02
0.
0. 95¡ À 025
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
unless otherwise specified)
Test
conditions
MIN
20
12
3
1
1
50
6
2
300
GHz
dB
TYP
MAX
UNIT
V
V
V
Ic=10
µ
A, I
E
=0
Ic= 1mA, I
B
=0
I
E
= 10
µ
A, I
C
=0
V
CB
= 10 V, I
E
=0
V
EB
= 1V , I
C
=0
V
CE
= 10V, I
C
= 20mA
V
CE
=10V, I
C
= 20mA
V
CE
=10V, I
C
= 7mA, f = 1GHz
0. 35
2. 92¡ À0. 05
Collector current
0.1
A
I
CM
:
Collector-base voltage
V
(BR)CBO
:
20
V
Operating and storage junction temperature range
2. 80¡ À 05
0.
1. 60¡ À0. 05
1. 9
µ
A
µ
A
f
T
NF
CLASSIFICATION OF h
FE
Marking
Rank
Range
R23
Q
50-100
R24
R
80-160
R25
S
125-250
1 
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05