2SC4102
TRANSISTOR (NPN)
FEATURES
High Breakdown Voltage
Complements the 2SA1579
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
50
200
625
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–323
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=10mA, I
B
=1mA
V
CE
=12V,I
c
=2mA ,f=100MHz
V
CB
=12V, I
E
=0, f=1MHz
140
2.5
180
conditions
Min
120
120
5
500
500
560
0.5
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
R
180–390
TR
S
270–560
TS
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
