2SC4115
TRANSISTOR (NPN)
SOT-89
FEATURES
Low V
CE(sat)
.V
CE(sat)
= 0.2V (Typ.)(I
C
/ I
B
= 2A / 0.1A)
Excellent current gain characteristics.
Complements to 2SA1585
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
20
6
3
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
1. BASE
1
2
3
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Transition frequency
*pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
f
T
Test
conditions
MIN
40
20
6
0.1
0.1
120
560
0.5
200
290
V
MHz
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
= 50μA, I
E
=0
I
C
=1mA , I
B
=0
I
E
=50μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=2V, I
C
= 0.1A
I
C
= 2A, I
B
=0.1A
V
CE
=2V, I
C
=0.5 A
F=100MHz
CLASSIFICATION OF h
FE
Rank
Range
marking
Q
120-270
4115Q
R
180-390
4115R
S
270-560
4115S
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
