2SC4177
TRANSISTOR (NPN)
FEATURES
High DC Current Gain
Complementary to 2SA1611
High Voltage
APPLICATIONS
General Purpose Amplification
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
100
150
833
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Test
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
0.55
250
3
90
conditions
Min
60
50
5
100
100
600
0.3
1
0.65
V
V
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
L4
90–180
L4
L5
135–270
L5
L6
200–400
L6
L7
300–600
L7
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
