2SC4215
TRANSISTOR (NPN)
FEATURES
Small reverse transfer capacitance: Cre= 0.55pF(typ.)
Low noise figure: NF=2dB (typ.) (f=100 MHz)
1. BASE
2. EMITTER
SOT-323
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
4
20
100
150
-55-150
Units
V
V
V
mA
mW
℃
℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-base time constant
Transition frequency
Reverse transfer capacitance
Noise figure
Power gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Cc.r
bb
′
f
T
C
re
NF
Gpe
V
CC
=6V,I
c
=1mA,f=100MH
Z
17
Test
conditions
MIN
40
30
4
0.1
0.5
40
200
25
260
550
0.55
2
23
5
ps
MHz
pF
dB
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=40V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=6V,I
C
=1mA
V
CE
=6V,I
C
=1mA, f=30MH
Z
V
CE
=6V,I
C
=1mA,
V
CB
=10V,f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
R
40-80
QR
O
70-140
QO
Y
100-200
QY
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
