2SC4944
DUAL TRANSISTOR (NPN+ NPN)
SOT-353
Features
Small package (dual type)
High voltage and high current
High h
FE,
excellent
h
FE
linearity
Complementary to 2SA1873
Marking: LY LGR
1
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
50
5
150
200
150
-55 to150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
Min
60
50
5
0.1
0.1
120
400
0.25
80
3.5
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=2mA
I
C
=100mA,I
B
=10mA
V
CE
=10V,I
C
=1mA
V
CB
=10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
Y
120-240
LY
GR
200-400
LGR
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
