2SD1757K
TRANSISTOR (NPN)
FEATURES
Optimal for muting.
SOT-23
1. BASE
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
15
6.5
500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Test
I
C
=
50μ
A,I
E
=0
I
C
=
1
mA,I
B
=0
I
E
=
50μ
A,I
C
=0
V
CB
=2
0
V,I
E
=0
V
EB
=
4
V,I
C
=0
V
CE
=
3
V,I
C
=
100
mA
I
C
= 500mA, I
B
=50mA
V
CE
=5V, I
C
= 50mA ,
f=100
MHz
V
CB
=10V,I
E
=0,f=1MH
Z
150
15
120
conditions
MIN
30
15
6.5
0.5
0.5
560
0.4
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
MARKING
h
FE
Q
120-270
AAQ
R
180-390
AAR
S
270-560
AAS
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
