2SD2098
FEATURES
Excellent DC current gain characteristics
Complements the 2SB1386
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
20
6
5
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF
Rank
Range
Marking
h
FE
Q
120-270
AHQ
R
180-390
AHR
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
50
20
6
0.5
0.5
120
390
1
150
30
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=50μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50μA, =0
V
CB
=40V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=0.5A
I
C
=4A,I
B
=100mA
V
CE
=6V,I
C
=50mA,f=100MHz
V
CB
=20V,I
E
=0,f=1MHz
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
