2SD2114
TRANSISTOR (NPN)
FEATURES
High DC current gain.
High emitter-base voltage.
Low V
CE (sat)
.
MARKING: BBV,BBW
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
20
12
0.5
0.25
150
-55-150
Units
V
V
V
A
W
℃
℃
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
output capacitance
On resistance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Test
conditions
I
E
=0
MIN
25
20
12
0.5
0.5
820
2700
0.4
350
8
0.8
V
MHz
TYP
MAX
UNIT
V
V
V
I
C
=10
μ
A,
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=20 V, I
E
=0
V
EB
=10V,I
C
=0
V
CE
=3V, I
C
=10mA
I
C
= 500mA, I
B
=20 mA
V
CE
=10V, I
C
=50mA
μ
A
μ
A
f
T
f=
100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
in
=0.1V(rms),I
B
=1mA,
f=1KH
Z
C
ob
R
(on)
pF
Ω
CLASSIFICATION OF
Rank
Range
h
FE
V
820-1800
W
1200-2700
１
JinYu
semiconductor
www.htsemi.com
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