2SD2142
TRANSISOR (NPN)
FEATURES
Darlington Connection for a High h
FE
High Input Impedance
MARKING: R1M
SOT–23
1. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
32
12
300
200
625
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
Min
40
32
12
0.1
0.1
5000
1.4
200
2.5
V
MHz
pF
Typ
Max
Unit
V
V
V
µA
µA
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=12V, I
C
=0
V
CE
=3V, I
C
=100mA
I
C
=200mA, I
B
=0.2mA
V
CE
=5V,I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
1
JinYu
semiconductor
www.htsemi.com