2SD874
TRANSISTOR (NPN)
FEATURES
Low Collector-Emitter Saturation Voltage
Large Collector Power Dissipation
Mini Power Type Package
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
conditions
Min
30
25
5
0.1
0.1
85
50
0.4
1.2
200
20
V
V
MHz
pF
340
Typ
Max
Unit
V
V
V
µA
µA
I
C
=10µA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=20V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V, I
C
=500mA
V
CE
=5V, I
C
=1A
I
C
=500mA,I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CE
=10V,I
C
=50mA, f=200MHz
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF
h
FE
(
1
)
RANK
RANGE
MARKING
Q
85–170
ZQ
R
120–240
ZR
S
170–340
ZS
1
JinYu
semiconductor
www.htsemi.com