2SD874A
TRANSISTOR (NPN)
FEATURES
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Complementary to 2SB766A
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
1
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=5V,I
C
=1A
I
C
=500mA,I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CE
=10V,I
C
=50mA,f=200MHz
V
CB
=10V,I
E
=0,f=1MHz
200
20
50
0.4
1.2
V
V
MHz
pF
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Test
conditions
MIN
60
50
5
0.1
0.1
85
340
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=10μA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=20V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V,I
C
=500mA
CLASSIFICATION OF
Rank
Range
Marking
h
FE(1)
Q
85-170
YQ
R
120-240
YR
S
170-340
YS
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
