2SD999
TRANSISTOR (NPN)
FEATURES
Low Collector-Emitter Saturation Voltage
Mini Power Type Package
Excellent DC Current Gain Linearity
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base -emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
V
CE(sat)
*
V
BE(sat)
*
V
BE
*
f
T
C
ob
Test
conditions
Min
30
25
5
0.1
0.1
90
50
0.4
1.2
0.6
130
22
0.7
V
V
V
MHz
pF
400
Typ
Max
Unit
V
V
V
µA
µA
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=1A
I
C
=1A,I
B
=0.1A
I
C
=1A,I
B
=0.1A
V
CE
=6V, I
C
=10mA
V
CE
=6V,I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
*Pulse test: pulse width
≤350μs,
duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE
（
1
）
RANK
RANGE
MARKING
CM
90–180
CM
CL
135–270
CL
CK
200–400
CK
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
