A105
1
TRANSISTOR (PNP)
SOT-23
FEATURES
High voltage and high current
Excellent h
FE
Linearity
Low niose
Complementary to C1815
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BA
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-5
150
200
125
-55-125
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Test
conditions
MIN
-50
-50
-5
-0.1
-0.1
-0.1
130
400
-0.3
-1.1
80
V
V
MHz
TYP
MAX
UNIT
V
V
V
uA
uA
uA
I
C
= -100u A, I
E
=0
I
C
= -0.1mA, I
B
=0
I
E
= -100 u A, I
C
=0
V
CB
=-50V ,
V
CE
= -50V ,
V
EB
=- 5V,
V
CE
=-6V,
I
E
=0
I
B
=0
I
C
=0
I
C
= -2mA
I
C
=-100 mA, I
B
= -10mA
I
C
=-100 mA, I
B
= -10mA
V
CE
=-10V, I
C
= -1mA
f=30MHz
CLASSIFICATION
Rank
Range
OF
h
FE
L
130-200
H
200-400
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
