B0520WS/B0530WS/B0540WS
SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transi ent Protection
High Conductance
Also Available in Lead Free Version
MARKING: B0520WS: SD
B0530WS: SE
B0540WS: SF
SOD-323
+
-
-
Maximum Ratings @T
A
=25℃
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
o
I
FSM
P
D
R
θJA
T
j
T
STG
dv/dt
14
21
0.5
5.5
200
625
150
-65~+150
1000
28
V
A
A
mW
℃/W
℃
℃
V/μS
20
30
40
B0520WS
B0530WS
B0540WS
Unit
V
RMS Reverse Voltage Reverse voltage (DC)
Average rectified output Current
Forward current surge peak
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Voltage Rate of Change
Electrical Characteristics @T
A
=25℃
Parameter
Minimum Reverse
Breakdown Voltage
Symbol
B0520WS
20
V
(BR)R
--
--
V
F1
Forward voltage
V
F2
V
F3
Reverse current
I
R1
I
R2
I
R3
Reverse current
I
R4
I
R5
Capacitance between terminals
C
T
0.3
0.385
--
75
--
250
--
--
170
B0530WS
--
30
--
0.36
0.45
--
--
80
100
500
--
170
B0540WS
--
--
40
--
0.510
0.62
--
--
10
--
20
170
pF
μA
μA
V
V
Unit
Conditions
I
R
=250μA
I
R
=500μA
I
R
=20μA
I
F
=0.1A
I
F
=0.5A
I
F
=1A
V
R
=10V
V
R
=15V
V
R
=20V
V
R
=30V
V
R
=40V
V
R
=0,f=1MHz
１
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semiconductor
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