BAP64-05
PIN DIODE
FEATURES
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz
RF attenuators and switches
SOT-23
Marking:
5K
Maximum Ratings @T
A
=25℃
Parameter
Continuous reverse voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V
R
I
F
P
D
R
θJA
T
j
T
STG
Limits
175
100
2
50
500
150
-65~+150
Unit
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse voltage leakage current
Forward voltage
Symbol
I
R
V
F
Test
V
R
=175V
V
R
=20V
I
F
=50mA
V
R
=0, f=1MHz
Diode capacitance
C
d
V
R
=1V, f=1MHz
V
R
=20V, f=1MHz
I
F
=0.5mA, f=100MHz;note1
I
F
=1mA, f=100MHz
;note1
Diode forward resistance
r
D
I
F
=10mA, f=100MHz;note1
I
F
=100mA, f=100MHz;note1
0.52
0.37
0.23
20
10
2
0.7
1.55
0.35
40
20
3.8
1.35
μS
Ω
pF
conditions
MIN
TYP
MAX
10
1
1.1
UNIT
µA
V
when switched from
Charge carrier life time
τ
L
I
F
= 10 mA to I
R
= 6 mA; R
L
=
100
Ω;
measured at I
R
=3mA
Series inductance
L
S
I
F
=100mA, f=100MHz
1.4
nH
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
