BAS16V
SWITCHING DIODE
SOT-563
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
1
Marking: KAM
Maximum Ratings @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
T
j
T
STG
Limits
100
75
53
300
200
2.0
1.0
150
833
150
-65~+150
Unit
V
V
V
mA
mA
A
mW
K/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V
(BR) R
I
R
Test
conditions
MIN
75
1
25
0.715
0.855
1
1.25
2
4
MAX
UNIT
V
µA
nA
V
I
R
= 100µA
V
R
=75V
V
R
=20V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
Forward voltage
V
F
Diode capacitance
Reveres recovery time
C
D
t
rr
pF
nS
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
