BAS40/-04/-05/-06
SCHOTTKY DIODE
FEATURES
Low Forward Voltage
Fast Switching
SOT-23
BAS40 MARKING: 43•
BAS40-06 MARKING: 46
BAS40-05 MARKING:45
BAS40-04 MARKING:44
Maximum Ratings @T
A
=25℃
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking Voltage
Forward continuous Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction temperature
Storage temperature range
Symbol
V
RRM
V
RWM
V
R
I
FM
P
D
R
θJA
T
J
T
STG
200
200
625
125
-65-125
mA
mW
℃/W
℃
℃
40
V
Limits
Unit
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward
voltage
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
I
R
= 10
μ
A
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0,f=1MHz
I
rr
=1mA, I
R
=I
F
=10mA
R
L
=100Ω
conditions
MIN
40
200
380
1000
5
5
MAX
UNIT
V
nA
mV
Diode capacitance
Reverse Recovery time
pF
nS
1
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05