BAS40V
SCHOTTK Y DIODE
SOT-563
FEATURES
Low Forward Voltage Drop
Fast Switching
1
Marking: KAN
Maximum Ratings @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal
Resistance.
Junction
to
Symbol
V
RM
V
R
I
O
Pd
R
θ
JA
T
J
T
STG
Limits
40
200
150
833
-55-125
-65-150
Unit
V
mA
mW
℃/W
℃
℃
Ambient Air
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Total
voltage
leakage current
Symbol
V
(BR)
I
R
V
F
C
T
t
rr
unless
Test
I
R
= 10
μ
A
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0,f=1MHz
otherwise
specified)
MIN
40
200
380
1000
5
5
MAX
UNIT
V
nA
mV
conditions
capacitance
pF
nS
Reverse recovery time
I
F
=10mA, I
R
=I
F
=1mA
R
L
=100Ω
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
