BAT54V
SCHOTTKY DIODE
SOT-563
FEATURES
Surface mount schottky barrier diode arrays
1
Marking: KAV
Maximum Ratings @T
A
=25℃
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Storage temperature
Symbol
V
RRM
V
RWM
V
R
I
O
P
D
R
θ
JA
T
STG
Limits
30
200
150
833
-65-125
Unit
V
mA
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)R
I
R
Test
conditions
MIN
30
2
320
400
500
1000
10
5
mV
MAX
UNIT
V
I
R
= 100
μ
A
V
R
=25V
I
F
=1mA
u
A
Forward
voltage
V
F
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=1V,f=1MHz
I
F
=10mA, I
R
=10mA~1mA
R
L
=100Ω
Total
capacitance
C
T
t
rr
pF
nS
Reverse recovery time
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
