BC80W7
TRANSISTOR (PNP)
BC807-16W
BC807-25W
BC807-40W
FEATURES
·
Ldeally suited for automatic insertion
·
epitaxial planar die construction
·
complementary NPN type available(BC817)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: 807-16:5A;
807-25:5B;
807-40:5C
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.5
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
807-16
807-25
807-40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
I
C
=-500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -5V, I
C
= -10mA
100
h
FE(1)
V
CE
= -1V,
I
C
= -100mA
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
Test
conditions
MIN
-50
-45
-5
-0.1
-0.2
-0.1
100
160
250
250
400
600
-0.7
-1.2
V
V
MHz
MAX
UNIT
V
V
V
I
C
= -10
μ
A, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -1
μ
A, I
C
=0
V
CB
= -45V, I
E
=0
V
CE
= -40V, I
B
=0
V
EB
= -4 V, I
C
=0
μ
A
μ
A
μ
A
f
T
f=
100MHz
１
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semiconductor
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