BC856A,B
BC857A, B,C
BC858A, B,C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX UNIT
V
Collector-base breakdown voltage
BC856
BC857
BC858
BC856
BC857
BC858
-80
-50
-30
-65
-45
-30
VCBO
IC= -10μA, IE=0
Collector-emitter breakdown voltage
VCEO
VEBO
ICBO
IC= -10mA, IB=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
-5
IE= -1μA, IC=0
BC856
BC857
BC858
BC856
BC857
BC858
V
CB= -70 V , IE=0
VCB= -45 V , IE=0
-0.1
μA
V
CB= -25 V , IE=0
CE= -60 V , IB=0
Collector cut-off current
V
ICEO
IEBO
hFE
VCE= -40 V , IB=0
CE= -25 V , IB=0
VEB= -5 V , IC=0
-0.1
-0.1
μA
μA
V
Emitter cut-off current
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
125
220
420
250
475
800
VCE= -5V, IC= -2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat) IC=-100mA, IB= -5 mA
BE(sat) IC= -100mA, IB= -5mA
-0.5
-1.1
V
V
V
VCE= -5 V, IC= -10mA
Transition frequency
Collector capacitance
100
MHz
pF
fT
f=100MHz
Cob
VCB=-10V, f=1MHz
4.5
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
